Low Stress Silicon Nitride Thin Film Deposition by PECVD 低应力PECVD氮化硅薄膜的制备
In this paper, we review emphasizedly several chemical vapour deposition methods and some properties of silicon nitride thin film. 本文着重评述了制备氮化硅薄膜的几种化学气相沉积方法和一些性能。
Silicon Nitride Thin Film Deposited by PECVD as a Protecting Layer on Photolithography Mask PECVD淀积Si3N4作为光刻掩膜版的保护膜
In the fabrication of solar cell, silicon nitride thin film is used as passivating film and anti-reflecting film. 硅基太阳能电池中,氮化硅用作钝化膜和减反射膜;
Luminescence from Silicon Nitride Film by LPCVD LPCVD氮化硅薄膜的室温可见光发射
In the third chapter, results and discussions of substrate transfer of thick silicon nitride film were elaborated. 第三章为多孔硅表面氮化硅的淀积与转移技术的结果与讨论。
We studied the relationship between the RF power, the chamber pressure and the film stress for deposited the silicon nitride film by Plasma Enhance Chemical Vapor Deposition ( PECVD). 研究了在等离子体增强化学气相沉积(PECVD)法制备氮化硅薄膜时,射频功率和腔室压力对氮化硅薄膜应力的影响以及应力与沉积速率的关系。
Photoluminescence from Er-doped Silicon-rich Silicon Oxide Film and Er-doped Silicon-rich Silicon Nitride Film and Its Annealing Behavior 室温下掺Er富硅氧化硅和掺Er富硅氮化硅的光致发光及其退火
As a potential anti-reflective coating, silicon nitride thin film was investigated and applied by the PV industry. 氮化硅薄膜作为一种新型的太阳电池减反射膜已被工业界认识和应用。
Silicon Nitride Film Transfer Technology and Fabrication of One Dimensional Photonic Crystal Based on Porous Silicon 氮化硅薄膜转移技术与多孔硅基一维光子晶体制备研究
Preparation and application of silicon nitride passivation film 氮化硅钝化膜的制备和应用
The surface structure and thermal stability of silicon nitride film 氮化硅薄膜材料的表面结构和热稳定性研究
Effect of Plasma Enhanced Chemical Vapor Deposition Parameters on Characteristics of Silicon nitride Film 等离子增强型化学气相沉积条件对氮化硅薄膜性能的影响
Plasma Dry-Etching of Silicon Nitride Film 氮化硅薄膜的等离子干法蚀刻
AES investigation of silicon nitride film 氮化硅薄膜的AES研究
Research on Silicon Nitride Thin Film for Solar Cells and Hydrogen Passivation 太阳电池用氮化硅薄膜及氢钝化研究
Silicon nitride film is a good window material for soft X-ray microscopy because of its many favorable properties, such as low X-ray absorption coefficient, smooth film surface and fairly dense with high mechanical strength. 氮化硅膜具有对软X射线吸收较小、成膜光滑、强度大和致密性好等优点,因而常选作为窗口材料。
A set of PECVD equipment for depositing silicon nitride film at low temperature has been designed and fabricated, and the film has been used successfully as a passivation layer on semiconductor devices. 我们设计制造了一套PECVD低温淀积氮化硅的小型设备。并将生成膜用于半导体器件的钝化。
Fabrication and Investigation of PECVD Silicon Nitride Film PECVD氮化硅薄膜的制备和研究
The structure and the property of amorphous silicon nitride film formed by direct current-plasma chemical vapour deposition ( DC-PCVD) were analyzed. 对用直流等离子体化学气相沉积(DC&PCVD)法得到的非晶态氮化硅薄膜结构与性能进行了研究。
The amorphous silicon nitride film between amorphous silicon film and glass substrate is found to have no any effects on the crystallization. 玻璃衬底与非晶硅膜之间的非晶氮化硅膜对非晶硅膜的晶化没有明显影响。
The effect of silicon nitride film mechanical properties on the performances of RF MEMS switch device was researched. 初步分析和探讨氮化硅薄膜的力学性能对RFMEMS开关器件性能的影响。
In the process of silicon nitride thin film prepared by PECVD, deposition parameters strongly influence the properties of silicon nitride thin film. 在PECVD氮化硅薄膜的实验中,沉积参数在很大程度上影响乃至决定着氮化硅薄膜的性能。
The metal-metal contact series RF MEMS switch was made, whose suspended beam was made of silicon nitride film. 用氮化硅薄膜作为悬梁,制作金属-金属接触式射频MEMS开关。
This paper concerns photo-CVD silicon nitride film including the deposition mechanism, equipment and the growth process. 文章介绍制备光化学气相淀积氮化硅薄膜的原理、设备及实验结果。
Microfabrication of silicon nitride film applied in microsensor 微型传感器中氮化硅薄膜的微加工技术
Recently, Silicon nitride film used as passivation antireflective film of silicon solar cells has been increasingly concerned. 近年来,氮化硅薄膜作为晶硅太阳电池的钝化减反膜引起了越来越多的关注。
On this basis of analysis about that thin film stress affects the film floating structure, a silicon nitride film of the appropriate stress and thickness as a stress equilibrium layer and support layer was selected. 分析了薄膜应力对薄膜悬空结构的影响,在此基础上选择合适应力值和厚度的氮化硅薄膜作为应力平衡层和支撑层。